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11:30 |
DS 51.1 |
Plasma-enhanced chemical vapor deposition of graphene on copper substrates — •Nicolas Wöhrl, Oliver Ochedowski, Steven Gottlieb, and Volker Buck
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11:45 |
DS 51.2 |
Continuous wafer-scale graphene on cubic-SiC(001) — •Victor Aristov, Olga Molodtsova, Alexei Zakharov, Dmitry Marchenko, Jaime Sánchez-Barriga, Andrei Varykhalov, Marc Portail, Marcin Zielinski, Igor Shvets, and Alexander Chaika
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12:00 |
DS 51.3 |
Characterization of single and few layer of molybdenum disulfide with spectroscopic imaging ellipsometry — •P. H. Thiesen, B. Miller, C. Röling, E. Parzinger, A. W. Holleitner, and U. Wurstbauer
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12:15 |
DS 51.4 |
Charge and Spin Transport in Turbostratic Graphene and Graphene Nanoribbons — •Nils Richter, Sebastian Schweizer, Ajit Kumar Patra, Yenny Hernandez, Akimitsu Narita, Xinliang Feng, Petr Ostrizek, Klaus Müllen, and Mathias Kläui
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12:30 |
DS 51.5 |
Graphene functionalisation with N and O: reversible or permanent modification of the electronic properties? — •Peter Brommer, Alex Marsden, Neil Wilson, Gavin Bell, and David Quigley
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12:45 |
DS 51.6 |
The contribution has been withdrawn.
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13:00 |
DS 51.7 |
Tuning of structural, electronic and optical properties in twisted bilayer MoS2 — •Jens Kunstmann, Arend M. van der Zande, Alexey Chernikov, Daniel A. Chenet, YuMeng You, XiaoXiao Zhang, Timothy C. Berkelbach, Pinshane Y. Huang, Lei Wang, Fan Zhang, Mark Hybertsen, David A. Muller, David R. Reichman, Tony F. Heinz, and James C. Hone
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