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DS: Fachverband Dünne Schichten

DS 6: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...)

DS 6.9: Talk

Monday, March 31, 2014, 17:15–17:30, CHE 89

Combinatorial epitaxial strained film growth: a new tool to adjust functional properties — •Sandra Kauffmann-Weiss^1,2,3, Sven Hamann⁴, Ludwig Reichel^1,2, Alexander Siegel⁴, Vasilis Alexandrakis⁴, Rene Heller⁵, Alfred Ludwig⁴, Ludwig Schultz^1,2, and Sebastian Fähler^1,3 — ¹IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany — ²Dresden University of Technology, Institute for Materials Science, 01062 Dresden, Germany — ³Technische Universität Chemnitz, Faculty of Natural Science, Institute of Physics, 09107 Chemnitz, Germany — ⁴Ruhr-University Bochum, Faculty of Mechanical Engineering, Institute of Materials, 44801 Bochum, Germany — ⁵Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

Whereas in bulk lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer layers or substrate materials. As a new tool for an efficient search for optimum parameter we present a continuous variation of lattice parameters of an alloy buffer layer by combinatorial film deposition of a Cu-Au layer on wafer level. These libraries are versatile as they allow tuning functional properties of various types of materials, ranging from (magnetic) shape memory alloys over multiferroics to permanent magnets.

Work was funded by DFG through SPP 1239 and EU through REFREEPERMAG.