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DS: Fachverband Dünne Schichten
DS 6: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...)
DS 6.9: Talk
Monday, March 31, 2014, 17:15–17:30, CHE 89
Combinatorial epitaxial strained film growth: a new tool to adjust functional properties — •Sandra Kauffmann-Weiss1,2,3, Sven Hamann4, Ludwig Reichel1,2, Alexander Siegel4, Vasilis Alexandrakis4, Rene Heller5, Alfred Ludwig4, Ludwig Schultz1,2, and Sebastian Fähler1,3 — 1IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany — 2Dresden University of Technology, Institute for Materials Science, 01062 Dresden, Germany — 3Technische Universität Chemnitz, Faculty of Natural Science, Institute of Physics, 09107 Chemnitz, Germany — 4Ruhr-University Bochum, Faculty of Mechanical Engineering, Institute of Materials, 44801 Bochum, Germany — 5Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
Whereas in bulk lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer layers or substrate materials. As a new tool for an efficient search for optimum parameter we present a continuous variation of lattice parameters of an alloy buffer layer by combinatorial film deposition of a Cu-Au layer on wafer level. These libraries are versatile as they allow tuning functional properties of various types of materials, ranging from (magnetic) shape memory alloys over multiferroics to permanent magnets.
Work was funded by DFG through SPP 1239 and EU through REFREEPERMAG.