Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 102: Sustainable photovoltaics with earth-abundant materials II (organized by DS)

HL 102.8: Talk

Thursday, April 3, 2014, 16:45–17:00, CHE 91

Growth and characterization of polycrystalline Cu₂ZnSnSe₄ layers with a preferential grain orientation — •Christoph Krämmer¹, Johannes Sachs¹, Mario Lang¹, Chao Gao¹, Sabine Schuster¹, Michael Powalla², Heinz Kalt¹, and Michael Hetterich¹ — ¹Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — ²Light Technology Institute, KIT, and Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart, Germany

The absence of the technologically relevant metals indium and gallium makes the kesterite Cu₂ZnSnSe₄ (CZTSe) material system a promising alternative to the established Cu(In,Ga)Se₂. Hiqh-quality CZTSe layers on GaAs would be highly desirable for the study of basic material properties such as the band structure. We use selenization of a Sn/Cu/ZnSe(001) structure on GaAs(001) substrate in order to fabricate polycrystalline CZTSe layers with preferential grain orientation. In this contribution we present a detailed investigation of those layers by means of X-ray diffraction and Raman spectroscopy. These measurements prove that a highly preferential grain orientation in all three dimensions is indeed obtained in the formed CZTSe film.