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HL: Fachverband Halbleiterphysik

HL 105: Poster: Topological insulators (with MA/O)

HL 105.11: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Epitaxial growth of LaNiO₃ and LaAlO₃ thin films and multilayers by PLD — •Haoming Wei, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, Germany

As predicted by recent theoretical study, the superlattices (SLs) consisting of paramagnetic metal LaNiO₃ (LNO) and band insulator LaAlO₃ (LAO) may exhibit exotic topological phases[1]. We have grown LNO, LAO films and LNO/LAO heterostructures by plused laser deposition (PLD). All the films show good out-of-plane and in-plane crystalline orientation and definite epitaxial relationship. The lattice constant and strain of LNO films could be controlled by adjusting growth conditions. The LNO films have an excellent metallic conductivity and the resistivity is related to strain. The low resistivity is about 300µΩ·cm at 300 K, which is low enough for use as an electrode material. The LAO films obtained by interval PLD exhibit terraced surface even when grown at a low temperature. The height of the terraces is about 0.4 nm in accord with the calculated result from XRD pattern. Further, LNO/LAO multilayer structures were fabricated. Atomic force microscopy (AFM) together with reflection high-energy electron diffraction (RHEED) images show that the multilayers have a smooth surface with the root mean square roughness about 3.2 nm.

[1] K. Y. Yang, et al. Physical Review B 84, 201104(R) (2011).