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17:00 |
HL 107.1 |
Structural properties of Cu2O1−xSx alloys from first principles — •Raphael Knecht, Marcel Giar, Markus Heinemann, and Christian Heiliger
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17:00 |
HL 107.2 |
Growth of Cuprous Oxide by Plasma-Assisted Molecular Beam Epitaxy — •Max Kracht, Jörg Schörmann, Martin Eickhoff, and Philip Klement
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17:00 |
HL 107.3 |
TEM investigation of structural changes in epitaxial (In,Sn)2O3 and (Sn,In)O2 films — •Stephan Scholz, Anna Mogilatenko, Holm Kirmse, Oliver Bierwagen, Mark E. White, Min-Ying Tsai, Martin Schmidbauer, James S. Speck, and Saskia F. Fischer
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17:00 |
HL 107.4 |
Towards realization of bipolar devices based on In2O3: Epitaxy of Be doped InAs on In2O3 — •Fariba Hatami, Ted Masselink, Martin Schmidbauer, Patrick Vogt, and Oliver Bierwagen
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17:00 |
HL 107.5 |
First principles investigation of influence of point defects on the magnetic properties of zinc ferrite — •Waheed A. Adeagbo, Sanjeev K. Nayak, Martin Hoffmann, Arthur Ernst, and Wolfram Hergert
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17:00 |
HL 107.6 |
TEM and FIB-based EBIC investigations to study photovoltaic properties of a complex oxide pn-heterojunction — •Patrick Peretzki, Pablo Marín Perera, Benedikt Ifland, Daniel Mierwaldt, Philipp Saring, Christian Jooss, and Michael Seibt
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17:00 |
HL 107.7 |
Ab initio investigations of Zr1−xCexO2 — •Michael Bachmann and Christian Heiliger
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17:00 |
HL 107.8 |
Ab-initio investigation of intermediate tin oxides — •Bianca Eifert and Christian Heiliger
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17:00 |
HL 107.9 |
Growth and characterization of cuprous oxide thin films by chemical vapor deposition — Johannes Bieber, •Elisabeth A. Zolnowski, Gunther Haas, Yinmei Lu, Benedikt Kramm, Martin Becker, and Bruno K. Meyer
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17:00 |
HL 107.10 |
Optical spectroscopy of doped Cu2O thin films — •Julian Benz, Philipp Hering, Torsten Henning, Uwe Kaiser, Wolfram Heimbrodt, Bruno K. Meyer, and Peter J. Klar
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17:00 |
HL 107.11 |
High-quality SnO2 thin films grown by chemical vapor deposition — •Yinmei Lu, Martin Becker, Benedikt Kramm, Johannes Bieber, Jie Jiang, Angelika Polity, and Bruno Meyer
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17:00 |
HL 107.12 |
Nitrogen doping in SnO2 thin films grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Johannes Bieber, and Bruno Meyer
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17:00 |
HL 107.13 |
three dimensional character of the near-EF band of cleaved In2O3(111) single crystals — •valentina scherer, christoph janowitz, zbigniew galazka, and recardo manzke
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17:00 |
HL 107.14 |
Electronic and optical properties of Ga2O3 — •Jürgen Furthmüller and Friedhelm Bechstedt
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17:00 |
HL 107.15 |
A spectroscopic comparison of AOS thin films and TCO single crystals — •Jörg Haeberle, Diana Gaspar, Pedro Barquinha, Stephan Machulik, Christoph Janowitz, Zbigniew Galazka, and Dieter Schmeißer
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17:00 |
HL 107.16 |
3ω thermal conductivity measurements of β−Ga2O3 bulk crystal — •Martin Handwerg, Christine Bülow, Rüdiger Mitdank, and Saskia F. Fischer
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17:00 |
HL 107.17 |
Structural and electrical investigations of Si-doped (InxGa1−x)2O3 thin films — •Anna Werner, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
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17:00 |
HL 107.18 |
Electrical characterization of Si-doped β-Ga2O3 thin films grown by pulsed laser deposition — •David Diering, Florian Schmidt, Stefan Müller, Daniel Splith, Holger von Wenckstern, and Marius Grundmann
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17:00 |
HL 107.19 |
Raman scattering in (In,Ga)2O3 thin films — •Christian Kranert, Christian Dähne, Jörg Lenzner, Holger von Wenckstern, Rüdiger Schmidt-Grund, and Marius Grundmann
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17:00 |
HL 107.20 |
NIR-VUV dielectric function of (In,Ga)2O3 thin film with lateral composition spread — •Hannes Krauß, Tammo Böntgen, Holger von Wenckstern, Jörg Lenzner, Rüdiger Schmidt-Grund, and Marius Grundmann
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17:00 |
HL 107.21 |
Properties of MIS-diodes based on Si-doped β-Ga2O3 — •Anna Reinhardt, Holger von Wenckstern, and Marius Grundmann
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