Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.11: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

High-quality SnO₂ thin films grown by chemical vapor deposition — •Yinmei Lu, Martin Becker, Benedikt Kramm, Johannes Bieber, Jie Jiang, Angelika Polity, and Bruno Meyer — 1. Physics Institute, Justus-Liebig-University Giessen, Germany

SnO₂ films with thicknesses of 10 - 1800 nm were deposited on c-sapphire, r-sapphire and quartz glass substrates with or without a SnO₂ buffer layer via chemical vapor deposition (CVD), using SnI₂ powder and oxygen gas as source materials, and at substrate temperatures ranging from 300 to 800 ^∘C. The crystal structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively, which reveal a high crystallinity of films with a smooth and homogeneous surface. For the ultra-thin films grown on c sapphire, the XRD rocking curve of SnO₂ (200) diffraction showed a small full width at half maximum (FWHM) of 0.02^∘ (72 arcsec), indicating an almost perfect epitaxial growth of SnO₂ on c-sapphire. Optical properties of the films with different thicknesses were compared via transmittance measurements, which reveal thickness-dependence of the band gaps of the films. Both secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to examine the composition and element states of the films. Electrical the properties of the films grown under different oxygen flows were investigated with Hall effect measurements. At room temperature, the Hall mobility, carrier density, and resistivity are in the ranges of (2.31 - 41.39) cm²/Vs, (0.902 - 41.4)·10¹⁸ cm⁻³ and (6.09 · 10⁻³ - 2.99) Ωcm, respectively.