Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.12: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

Nitrogen doping in SnO₂ thin films grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Johannes Bieber, and Bruno Meyer — 1. Physics Institute, Justus-Liebig-University, Giessen, Germany

As a direct band gap semiconductor, tin oxide (SnO₂) is a promising candidate for constructing next generation ultraviolet light emitting diodes (LEDs) and photodetectors, due to its large band gap of 3.6 eV, high exciton binding energy of 130 meV, and high carrier mobility of about 250 cm²/Vs at room temperature. An essential step to fabricate SnO₂-based optoelectronic devices is to obtain high quality p-type SnO₂ films. Nitrogen is theoretically predicted to be an excellent p-type dopant in SnO₂ owing to its suitable electronegativity and ion size, high solubility limit, and non-toxicity. At the same time, only a few experimental investigations were performed on N-doped SnO₂. For this reason, we deposit the N-doped SnO₂ thin films on c-sapphire and r-sapphire substrates via chemical vapor deposition (CVD), using SnI₂ powder and NO₂ (or NH₃) gas as source materials. The crystal structure, morphology, electrical properties and optical properties of the films were measured and investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall effect measurements and transmittance measurements, respectively.