Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.13: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

three dimensional character of the near-E_F band of cleaved In₂O₃(111) single crystals — •valentina scherer¹, christoph janowitz¹, zbigniew galazka², and recardo manzke¹ — ¹Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Germany — ²Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

The near-E_F band of the in situ cleaved (111) surface of high quality n-type In₂O₃ single crystals obtained from the melt was investigated by high-resolution ARPES along major symmetry lines of the Brillouin zone. Several criteria to pin down Fermi level crossings and Fermi momenta were applied. To good approximation the near-E_F band is of three-dimensional character in momentum space and simply monitors the dispersion of the bottom of the conduction band bent below the Fermi energy. The results are explained without explicit reference to two-dimensional models by the assumption of a degenerate semiconductor due to high n-type doping (n=1.3× 10¹⁸ cm⁻³).