Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives
HL 107.15: Poster
Thursday, April 3, 2014, 17:00–20:00, P1
A spectroscopic comparison of AOS thin films and TCO single crystals — •Jörg Haeberle1, Diana Gaspar2, Pedro Barquinha2, Stephan Machulik3, Christoph Janowitz3, Zbigniew Galazka4, and Dieter Schmeißer1 — 1Angewandte Physik/Sensorik, Brandenburgische TU Cottbus-Senftenberg,K.-Wachsmann-Allee 17, 03046 Cottbus, Germany — 2Department of Materials Science Faculty of Sciences and Technology,New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica,2829-516 Caparica, Portugal — 3Humboldt-Universität zu Berlin, Institut für Physik, Newtonstraße 15, 12489 Berlin, Germany — 4Leibnitz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Amorphous oxide semiconductors (AOS) and transparent conductive oxides (TCO) are today one of most attractive fields of research in many industrial products, like e.g. high definition, low cost, transparent, and flexible displays. We got the unique possibility to measure a-GIZO and a-SnOx thin films and compare their electronic properties with those of In2O3, Ga2O3, ZnO, and SnO2 single crystals. We use resPES to study the electronic properties. We report on the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From these we are able to derive the elemental ratio, the pDOS as well as the band scheme. At the O1s resonance we observe multiple Auger processes from which we deduce that a band of localized defect states is located between the Fermi energy and the CBM. The resonant profiles taken at the corresponding metal edges indicate that metal states are involved in the DOS.