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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.18: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Electrical characterization of Si-doped β-Ga₂O₃ thin films grown by pulsed laser deposition — •David Diering, Florian Schmidt, Stefan Müller, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig

Its large band gap of 4.9 eV makes β-gallium oxide (Ga₂O₃) an auspicious candidate for high power electronics and transparent opto-electronic devices. In order to investigate the electrical properties of β-Ga₂O₃ thin films we have applied current-voltage (I-V) characterization and space-charge spectroscopic methods (C-V, AS, TAS, DLTS) to Schottky contacts (SCs). The thin films have been grown by pulsed laser deposition at approx. 650 ^∘C and an oxygen partial pressure of 10⁻³   mbar. Using Ga₂O₃ targets with 0.1 wt% and 1 wt% SiO₂ the thin films have been fabricated on c-plane sapphire substrates and (00.1) ZnO/ZnO:Ga templates. The SCs have been formed by DC sputtering of Cu. The temperature dependent measurements have been conducted in the temperature range from 10 K to 330 K. First TAS measurements indicate a defect state with a thermal activation energy of E_t=216 meV with an apparent capture cross-section σ_a = 7× 10⁻¹⁷ cm².