Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives
HL 107.20: Poster
Thursday, April 3, 2014, 17:00–20:00, P1
NIR-VUV dielectric function of (In,Ga)2O3 thin film with lateral composition spread — •Hannes Krauß, Tammo Böntgen, Holger von Wenckstern, Jörg Lenzner, Rüdiger Schmidt-Grund, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
We present the dielectric function spectra of (In,Ga)2O3 in the full composition range obtained by means of spectroscopic ellipsometry. By model analysis of the experimental data using parametric model dielectric function approaches we derive the refractive index dispersion in the visible spectral range and the energies of electronic transitions as a function of the composition and temperature. A clear red shift of the transition energies with increasing In content is found.
The (In,Ga)2O3 thin film with compositional spread was deposited on 2" a-plane sapphire substrates by means of pulsed laser deposition. A two-fold segmented target was used where one half was pure Ga2O3 and the other In2O3. Target and substrate were then rotated synchronously to facilitate a continues gradient of the Ga/In ratio on the substrate [1].
[1] H. von Wenckstern et al., CrystEngComm 15, 10020 (2013).