Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives
HL 107.21: Poster
Donnerstag, 3. April 2014, 17:00–20:00, P1
Properties of MIS-diodes based on Si-doped β-Ga2O3 — •Anna Reinhardt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Semiconductor Physics Group
In the field of high-power electronics gallium oxide (Ga2O3) has a tremendous potential for future power device applications due to its large bandgap of 4.9 eV and its theoretically high breakdown field of about 8×108 V/m. For the development of Ga2O3-based power devices such as metal-insulator-semiconductor field-effect transistors (MISFET) the realization of MIS-diodes is essential.
We present our results on MIS-diodes deposited on silicon doped β-Ga2O3 thin films fabricated using pulsed-laser deposition. The electrical properties of the MIS-diodes were varied via the dielectric thickness and the oxygen partial pressure during contact deposition. Current-voltage measurements (IV) reveal leakage current densities of down to 10−9 Acm−2. In order to determine the dielectric constant of the insulator we performed quasi-static capacitance-voltage measurements. Furthermore, the possible origin of conduction through the insulator is investigated by means of temperature-dependent IV-measurements.