Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives
HL 107.2: Poster
Donnerstag, 3. April 2014, 17:00–20:00, P1
Growth of Cuprous Oxide by Plasma-Assisted Molecular Beam Epitaxy — •Max Kracht, Jörg Schörmann, Martin Eickhoff, and Philip Klement — I.Physikalisches Institut JLU-Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Deutschland
The research on cuprous oxide (Cu2O) is a topic with growing interest, since this intrinsic p-type material with a direct optical band gap of 2.17 eV consists of abundant elements only and has suitable properties for photovoltaic applications. Up to now the growth of high quality single crystalline thin films is quite challenging. Here we report on the growth of Cu2O thin films by plasma assisted molecular beam epitaxy (PAMBE) on MgO and sapphire. High resolution X-ray diffraction (HRXRD) shows epitaxial crystal growth on both substrates. On MgO two different orientations occur with the (100) and (110) planes parallel to the MgO(100) substrate surface, which can be influenced by the copper to oxygen ratio. On sapphire substrates the utilization of a MgO buffer leads to the formation of (111)-oriented crystallites. Electrical and optical properties were determined by Hall-effect and photoluminescence measurements.