Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.3: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

TEM investigation of structural changes in epitaxial (In,Sn)₂O₃ and (Sn,In)O₂ films — •Stephan Scholz¹, Anna Mogilatenko^1,2, Holm Kirmse¹, Oliver Bierwagen^3,4, Mark E. White⁴, Min-Ying Tsai⁴, Martin Schmidbauer⁵, James S. Speck⁴, and Saskia F. Fischer¹ — ¹Humboldt-Universität zu Berlin, 10099 Berlin, Germany — ²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany — ³Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany — ⁴University of California, Santa Barbara, CA 93106, USA — ⁵Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany

Transparent conducting oxides in In₂O₃-SnO₂ pseudo-binary system are used in many optoelectronic applications, e.g. solar cells, flatscreens and touchscreens. In single-crystalline In₂O₃ and SnO₂ films, the conductivity extrema with regard to the In:Sn ratio are accompanied by crystal structure degradation [1][2]. Thus, analysis of growth-induced defects and possible structural changes in thin oxide films is important for understanding the electrical properties of these materials.

We have applied transmission electron microscopy to characterize structural changes and compositional homogeneity in epitaxial (In,Sn)₂O₃ as well as (Sn,In)O₂ films grown by plasma-assisted molecular beam epitaxy. The obtained information contributes to the understanding of the mechanisms that lead to conductivity saturation in indium-tin-oxides. [1] O. Bierwagen and J. Speck, Phys. Status Solidi A. doi:10.1002/pssa.201330224 (2013). [2] M. White, O. Bierwagen, M. Tsai, and J. Speck, APEX 3, 051101 (2010)