Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives
HL 107.4: Poster
Donnerstag, 3. April 2014, 17:00–20:00, P1
Towards realization of bipolar devices based on In2O3: Epitaxy of Be doped InAs on In2O3 — •Fariba Hatami1, Ted Masselink1, Martin Schmidbauer2, Patrick Vogt3, and Oliver Bierwagen3 — 1Inst. für Physik, Humboldt-Universität zu Berlin, Berlin, Germany — 2Leibniz-Inst. für Kristalzüchtung, Berlin, Germany — 3Paul-Drude-Inst. für Festkörperelektronik, Berlin, Germany
In2O3 is an important transparent semiconducting oxide and has a great potential for applications in transparent microelectronics, optoelectronics, and short wavelength photonics. In2O3 exists only as n-type material. Even nominally undoped material is n type. This characteristic limits the application of In2O3 to the unipolar devices. A hybrid structure based on p-doped III-V semiconductors and In2O3 opens the possibility of realization of bipolar devices. This work presents the gas-source molecular-beam epitaxy growth of Be doped InAs on In2O3(111). In2O3 films with high crystalline quality were grown by PA-MBE on Y-stabilized ZrO2(111) wafers. The InAs layers were grown at different growth conditions and temperatures. According to the x-ray analysis InAs in all samples has zinc-blende structure and with increasing growth temperature the InAs film grows epitaxially and it changes from polycrystalline to monocrystalline.