Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 107: Poster: Emerging oxide semiconductors / Oxides other than ZnO and its relatives

HL 107.9: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

Growth and characterization of cuprous oxide thin films by chemical vapor deposition — Johannes Bieber, •Elisabeth A. Zolnowski, Gunther Haas, Yinmei Lu, Benedikt Kramm, Martin Becker, and Bruno K. Meyer — I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, DE-Germany

In the future all the forms of fossil energy will have to be replaced, due to the fact that these resources are limited. Solar cells have already been an important part of renewable energies, but to enlarge the competitiveness, they should be cheaper and more efficient than the present ones. A possible material which could comply with these requirements is cuprous oxide. It is a sustainable, cheap and nontoxic optoelectronic p-type semiconductor with a direct band gap of about 2.1 eV. It has been predicted that Cu₂O is promising for solar cell applications, with a theoretical energy conversion efficiency of 20%. Therefore we tried to optimize the growth of cuprous oxide thin films by chemical vapor deposition (CVD) and investigated their crystalline, electrical and optical properties under different growth conditions, respectively.