Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts
HL 108.25: Poster
Donnerstag, 3. April 2014, 17:00–20:00, P1
In-Plane-Gate transistors as gas sensors — •Benjamin Feldern, Arne Ludwig, and Andreas Wieck — Ruhr-Universität Bochum, Bochum, Deutschland
We propose In-Plane-Gate transistors [1] based on MBE grown GaAs/AlxGa1−xAs heterostructures with etched trenches for the detection of gases and liquids[2] at the surface of our devices. Additionally the gases or liquids are to be irradiated with THz light for the excitation of resonant states of the molecules.
It is to be determined whether the structures are capable of analyzing the gases and liquids by their dielectric function. Different gases and liquids shall be analyzed using these structures and the THz radiation. Possible interaction with passivated surfaces shall be examined.
[1] J. Nieder, A D. Wieck, P. Grambow, H. Lage, D. Heitmann, K. v. Klitzing, and K. Ploog, "One-dimensional lateral field-effect transistor with trench gate-channel insulation", Appl. Phys. Lett . 57, 2695 (1990).
[2] ] J. Kettle, S. Whitelegg, A.M. Song, D.C. Wedge, L. Kotacka, V. Kolarik, M.B. Madec, S.G. Yeates, and M.L. Turner, "Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications", Nanotechnology 21 075301 (2010).