Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.31: Poster

Thursday, April 3, 2014, 17:00–20:00, P1

Low-density InP-based quantum dots emitting at 1.5 μm telecom wavelength range — •Matusala Yacob, Johann Peter Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Germany

Self-assembled semiconductor quantum dots (QDs) can be used as building blocks of quantum information processing. For this application low density circular QDs operating in the telecom wavelength bands should be realized. The InP material system is a possible candidate to achieve this goal due to its low lattice mismatch (3.2%) to the InAs QD material. In this work, low-density InAs QDs are grown using post-growth annealing on AlGaInAs surfaces lattice matched to InP by solid-source molecular beam epitaxy. The dots are then covered with an AlGaInAs layer using a special capping procedure. Spatially separated largely sized QDs with a surface dot density of 5 dots per square μm are obtained using this technique. Optimized QD structures grown on a distributed Bragg reflector exhibit single QD emission at around 1.5 μm with a narrow excitonic linewidth below 50 μeV.