Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.32: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Electrical and optical properties of InP:Fe grown at GSMBE — •Anna Aleksandrova, Yuri V. Flores, Grygorii Monastyrskyi, Mykhaylo P. Semtsiv, and W. Ted Masselink — Department of Physics, Humboldt University Berlin, Newtonstr. 15, 12489, Berlin, Germany

We investigate the material and electrical properties of InP:Fe grown by gas-source molecular beam epitaxy (GSMBE) for use in making buried-heterostructure quantum-cascade lasers (BH-QCLs), especially focusing on the selective regrowth of highly strained AlAs-InAlAs/InP etched layers. The regrowth of the semi-insulating InP:Fe layer can be carried out over substrate temperatures between 450-550°C, which is more than 100°C below the standard growth temperature by metal-organic vapor-phase epitaxy (650-680°C), the standard method for laser overgrowth.Measurements on the test samples have shown that the arsine-phosphine cross-contamination can be held low, close to 1%. Planar (001) growth of 3-μm thick InP:Fe layers result in specific resistivity as high as 2E8 Ωcm. Regrowth on the etched laser ridge was done selectively at 550°C. The resistivity of the InP:Fe insulation layer cleaved from next to the laser ridge was measured as a function of temperature to determine the thermal activation energy of 680 meV, which is close to the half of the InP band gap. QCLs emitting at 3.9 and 10.7 μm were fabricated using the re-grown InP:Fe and compared to the same structures fabricated using SiO2.