Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 112: Energy materials: CIGS and related photovoltaics

HL 112.6: Vortrag

Freitag, 4. April 2014, 10:45–11:00, POT 112

Band alignment at the In₂S₃Cu(In,Ga)(S,Se)₂ interface in thin-film solar cells — •Dirk Hauschild¹, Katharina Treiber¹, Stephan Pohlner², Robert Lechner², Jörg Palm², Clemens Heske^3,4,5,6, Lothar Weinhardt^3,5,6, and Friedrich Reinert¹ — ¹Experimental Physics VII, University of Wuerzburg, Germany — ²AVANCIS GmbH & Co. KG, Munich, Germany — ³Institute for Photon Science and Synchrotron Radiation, KIT, Germany — ⁴Department of Chemistry, University of Nevada, Las Vegas (UNLV) — ⁵Institute for Chemical Technology and Polymer Chemistry, KIT, Germany — ⁶ANKA Synchrotron Radiation Facility, KIT, Germany

Both on laboratory scale as well as in large area industrial production, Cu(In,Ga)(S,Se)₂ (CIGSSe) based solar cells have been processed for many years with a CdS buffer layer between absorber and transparent front contact, using a chemical bath deposition process. However, CdS is toxic and therefore its usage increases the production and recycling costs. A substitution of CdS by In₂S₃ provides a Cd-free alternative that can be integrated in a dry inline production. The In₂S₃CIGSSe interface has been investigated using ultraviolet (UPS) and X-ray photoelectron spectroscopy (XPS), as well as inverse photoemission (IPES). The combination of these techniques allows the determination of the conduction and valence band extrema and reveals a complete picture of the band alignment at the In₂S₃CIGSSe interface. In this contribution we will compare the band alignments with and without tempering of the In₂S₃CIGSSe interface structure and discuss the implications for the performance of the device.