Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 112: Energy materials: CIGS and related photovoltaics

HL 112.7: Talk

Friday, April 4, 2014, 11:15–11:30, POT 112

Transient photoluminescence investigations on meta-stable Cu(In,Ga)Se2 thin-film solar cells and absorbers — •Viktor Gerliz, Stephan Heise, Jörg Ohland, Jürgen Parisi, and Ingo Riedel — Carl von Ossietzky University of Oldenburg, Germany

Light soaking and dark annealing can significantly affect the device performance of Cu(In,Ga)Se2 (CIGSe) thin film solar cells. Depending on the conditioning time we observe considerable improvements of the device performance in effect of thermal stress at 90°C under simulated AM1.5 illumination as reflected in an increased open circuit voltage (Voc) and doping concentration (ND). Contrarily, dark annealing of devices results in an opposed trend until a relaxed state is reached. It can be speculated that the conditioning has also impact on the minority carrier decay kinetics. Thus, we studied the time-resolved photoluminescence (TR-PL) decay for CIGSe solar cells and CdS-passivated CIGSe absorbers which were light-soaked/annealed for different conditioning times. Based on our results we discuss the change of Voc and ND of completed CIGSe solar cells with respect to the corresponding TR-PL decay characteristics