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HL: Fachverband Halbleiterphysik

HL 113: Quantum information systems II (with TT)

HL 113.2: Vortrag

Freitag, 4. April 2014, 09:45–10:00, POT 151

Ambient Temperature Spin Pumping of Silicon Carbide Quantum Defects — •Hannes Kraus¹, Franziska Fuchs¹, Daniel Riedel¹, Victor Soltamov², Dmitrij Simin¹, Stefan Väth¹, Andreas Sperlich¹, Pavel Baranov², Georgy Astakhov¹, and Vladimir Dyakonov¹ — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, Germany — ²Ioffe Physical-Technical Institute, St. Petersburg, Russia

Silicon carbide is best known as a high performance power electronics semiconductor, although intrinsic defects in this material, particularly silicon vacancies, are very promising for quantum information processing, photonics and magnetometry [1]. This is due to the defects' intriguing quantum properties: The SiC defect spin states can be initialized and subsequently read using optically detected magnetic resonance (ODMR), and the high-spin ground state of these defects can be selectively populated by optical pumping. Similar to a lasing system, this leads to a population inversion and, consequently, to a stimulated radio emission [2]. We show this effect also works at room temperature, which opens an interesting perspective to construct low noise, low cost and low maintenance solid state radio amplifiers. Another opportunity is the defect ODMR's dependence on magnetic field orientation and temperature, suggesting SiC applications in quantum sensing.

[1] D. Riedel et al., Phys. Rev. Lett. 109, 226402 (2012)

[2] H. Kraus et al., Nature Physics (2013), doi:10.1038/NPHYS2826