Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 114: Oxides: Bulk, films and interfaces
HL 114.4: Vortrag
Freitag, 4. April 2014, 10:15–10:30, POT 251
Heteroepitaxial ZnO films on diamond — Fabian Schuster1, •Martin Hetzl1, Cesar Magén2,3, Jordi Arbiol4,5, Jose Garrido1 und Martin Stutzmann1 — 1Walter Schottky Institut, Technische Universität München, Garching, Germany — 2Laboratorio de Microscopías Avanzadas (LMA) - Instituto de Nanociencia de Aragon (INA) and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Spain — 3Fundación ARAID, Zaragoza, Spain — 4Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, Spain — 5Institució Catalana de Recerca i Estudis Avancats (ICREA), Barcelona, Spain
The growth of heteroepitaxial ZnO films on (110) diamond substrates is demonstrated by molecular beam epitaxy. Structural characterization is performed by means of X-ray diffraction and scanning transmission electron microscopy imaging (STEM), where single domain growth is observed. The growth direction is found to be along the polar c-axis with Zn-polarity, deduced from annular bright field STEM. Photoluminescence and absorption studies reveal good optical properties as well as amplified spontaneous emission for optical excitation above a threshold of 30 kW/cm2. In addition, electronic band structure simulations are presented, showing that the ZnO polarity dominates the electronic structure of the interface: the formation of a 2DEG on the ZnO side or a 2DHG on the diamond side are predicted for Zn- and O-polarity, respectively.