Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 114: Oxides: Bulk, films and interfaces
HL 114.5: Talk
Friday, April 4, 2014, 10:30–10:45, POT 251
A comprehensive study on ion-implantation induced defects in ZnO thin films — •Florian Schmidt1, Stefan Müller1, Holger von Wenckstern1, Robert Röder2, Sebastian Geburt2, Carsten Ronning2, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — 2Friedrich-Schiller-Universität Jena, Institute for Solid State Physics, D-07743 Jena
Deep defects levels in semiconductors have significant impact on material properties and device performance. Therefore a profound understanding of such defects is helpful for device optimization. Devices based on the semiconductor ZnO has been reported in the last years and even simple transparent circuitry have been demonstrated [1].
Here we present characterization of deep-level defects introduced by implantation of Ar+, Ne+, Zn− and O− by means of deep-level transient spectroscopy (DLTS) and optical DLTS (ODLTS). Independent of the implanted ion defect levels with thermal activation energies of Ea ≈ 1000 meV and ≈ 1200 meV were introduced. A defect level with the thermal activation energy of 388 meV was only detectable after oxygen ion implantation. We will present for each ion implanted the density of the defects introduced.
[1] H. Frenzel et al., phys. stat. sol. RRL 7 (9), 605 (2013).