Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 114: Oxides: Bulk, films and interfaces

HL 114.6: Talk

Friday, April 4, 2014, 10:45–11:00, POT 251

Influence of deposition parameters on p-NiO/n-ZnO heterojunctions — •Paul Räcke, Robert Karsthof, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig, Germany

An ideal transparent solar cell completely transmits the visible part of the solar spectrum. At the same time, the energy of the rest of the solar spectrum is converted into electric power as efficiently as possible. A few wide-gap transparent semiconductors are candidates for the construction of a photovoltaic cell that absorbs radiation in the UV spectral range.

In this work the optical and electrical properties of zinc oxide-nickel oxide thin film heterojunctions were studied. The p-type NiO was grown by reactive DC sputter deposition onto pulsed laser deposited (PLD) n-type ZnO with a highly transparent ZnO:Al back contact on a-sapphire. A very thin gold layer on top of the NiO works as hole extraction layer. The result is a semi-transparent cell stack for which the transmission is mainly limited by the NiO layer and depends on its thickness and stoichiometry.

We investigated the influence of the NiO film thickness on the transmission spectrum and the IV characterstics including photovoltaic parameters. Furthermore, the transmission by the NiO was improved tremendously by annealing the cell stack in an oxygen ambient. The changes in the IV characteristics will be discussed as well.