Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 116: Topological insulators (organized by MA)
HL 116.9: Vortrag
Freitag, 4. April 2014, 11:45–12:00, HSZ 04
Sputter Deposition of Half-Heusler Topological Insulators — •Benedikt Ernst, Daniel Ebke, Stanislav Chadov, Gerhard Fecher, and Claudia Felser — Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany
Heusler compounds have exhibited manifold physical properties in the recent years and attracted a lot of interest in the field of spintronic applications due to their half-metallic properties. Recently, a topological insulating state has been predicted by theory for some of these compounds.
In this work, we have prepared Heusler materials such as LaPdBi and LaPtBi for which a topological insulating behavior was predicted. Co-deposition by DC- and RF magnetron sputtering was used to prepare corresponding thin films. To realize an epitaxial film growth in the crystallographic C1b structure on MgO-substrates, a buffer layer was applied and optimized. Initial transport properties will be discussed with regard to the film composition and the crystallographic properties.