Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Nitrides: Optical characterization
HL 13.2: Vortrag
Montag, 31. März 2014, 11:30–11:45, POT 251
Time-integrated and time-resolved luminescence studies of hybrid InGaN/GaN MQW microrod structures — •Angelina Vogt1, Stephanie Bley1, Jana Hartmann2, Sebastian Resch3, Xue Wang2, Matin Sadat Mohajerani2, Martin Mandl4, Martin Straßburg4, Siegfried Waldvogel3, Andreas Waag2, Jürgen Gutowski1, and Tobias Voss1 — 1Institute of Solid State Physics, University of Bremen — 2Institute of Semiconductor Technology, TU Braunschweig — 3Institute of Organic Chemistry, Johannes Gutenberg University Mainz — 4Osram Opto Semiconductors GmbH
Three-dimensional GaN-based microrods with embedded InGaN multi-quantum-well structures (MQW) are promising candidates for sensors and light-emitting diodes in the green-ultraviolet spectral region. In order to extend the available wavelength region or to achieve selectivity in sensing devices, coating of the microrod structures with specific organic compounds can be applied. Here, we study the luminescence properties of GaN-based microrod LED structures coated with a perylene bisimide derivative. The InGaN/GaN LED structures were grown by MOVPE. Prior to the dye-coating process, their luminescence properties were studied in order to investigate their homogeneity. The samples were afterwards wet chemically coated with the perylene dye. The energy transfer from the QWs to the dye layer was studied in time-integrated and time-resolved photoluminescence experiments. We compare and discuss the luminescence dynamics in the bare InGaN/GaN microrod LEDs and the hybrid systems and analyse the energy transfer from the inorganic to the organic part.