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15:00 |
HL 19.1 |
Comparison of gallium nitride nanorod growth in MBE and MOVPE on nitridated c-plane sapphire — •Julian Stoever, Marc Sauerbrey, Stephan Figge, Jan Ingo Flege, Timo Aschenbrenner, Gerd Kunert, Jens Falta, and Detlef Hommel
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15:15 |
HL 19.2 |
Light Emitters Based on GaN Nano-Stripes with Semipolar Quantum Wells — •Robert Anton Richard Leute, Junjun Wang, Tobias Meisch, Benjamin Neuschl, Klaus Thonke, and Ferdinand Scholz
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15:30 |
HL 19.3 |
( 1122 ) InGaN/GaN LEDs grown on 2" patterned sapphire substrates — •Tobias Meisch, Sabine Schörner, Junjun Wang, Klaus Thonke, and Ferdinand Scholz
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15:45 |
HL 19.4 |
Al(Ga)N electron blocking heterostructure design for high injection efficient 290 nm light emitting diodes — •Martin Guttmann, Christoph Reich, Tim Kolbe, Frank Mehnke, Christian Kuhn, Jens Rass, Tim Wernicke, Mickael Lapeyrade, Sven Einfeldt, and Michael Kneissl
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16:00 |
HL 19.5 |
Characteristics of sub-300 nm AlGaN multiple quantum well lasers grown on epitaxially laterally overgrown AlN/sapphire substrates — •Martin Martens, Peter Schneider, Frank Mehnke, Christian Kuhn, Christoph Reich, Viola Kueller, Arne Knauer, Carsten Netzel, Jens Rass, Tim Wernicke, Markus Weyers, and Michael Kneissl
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16:15 |
HL 19.6 |
Sub-250 nm LEDs with enhanced charge carrier injection — •C. Kuhn, F. Mehnke, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, M. Weyers, and M. Kneissl
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16:30 |
HL 19.7 |
Surface passivation studies of AlInN/GaN based HEMTs grown on Si(111) by MOVPE — •Jonas Hennig, Aqdas Fariza, Hartmut Witte, Juergen Blaesing, Armin Dadgar, and Alois Krost
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16:45 |
HL 19.8 |
Defect characterisation in AlInN/AlN/GaN HEMT structures on Si(111) — •Aqdas Fariza, Hartmut Witte, Jonas Hennig, Oliver Krumm, Jürgen Bläsing, Armin Dadgar und Alois Krost
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17:00 |
HL 19.9 |
A comparative study of V/Al/Ni/Au and Ti/Al/Ni/Au ohmic contacts on n-AlGaN/GaN — •Christopher Schröter, Alexander Schmid, Volker Klemm, and Johannes Heitmann
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