Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 23: Quantum wires: Transport properties (with TT)

HL 23.6: Talk

Monday, March 31, 2014, 17:15–17:30, POT 006

Investigation of the electrical properties of freestanding Zn-doped GaAs nanowires by a multitip STM — •Matthias Steidl¹, Hubertus Junker², Weihong Zhao¹, Stefan Korte², Werner Prost³, Vasily Cherepanov², Bert Voigtländer², Peter Kleinschmidt¹, and Thomas Hannappel¹ — ¹Photovoltaics Group, Institute for Physics, Technische Universität Ilmenau, D-98684 Ilmenau — ²Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, D-52425 Jülich and JARA-Fundamentals of Future Information Technology — ³CeNIDE and Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen, D-47057 Duisburg

The specific geometry of III-V semiconductor makes III-V semiconductor nanowires (NWs) to promising building blocks for novel semiconductor devices in future electronic and opto-electronic applications. In this context a homogeneous distribution of the dopant over the whole NW is of great importance. We have grown p-type Zn-doped GaAs-NWs on GaP(111)B using the Au-assisted vapor-liquid-solid growth mode in a metal-organic vapor phase apparatus with different growth procedures. For the electrical characterization we apply a multitip STM as a nanoprober and conduct four-point probe measurements on single free-standing NWs. With this technique we are able to measure resistance profiles with a high spatial resolution over almost the whole length of a nanowire. These measurements reveal that the resistivity is both dependent on the growth condition and the part of the NW. Generally, the resistivity at the NW base is orders of magnitude larger compared to the upper part of the NW.