Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.12: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Top-down fabrication and characterization of silicon nanowire RFETs — •Dipjyoti Deb, Artur Erbe, Manfred Helm, and Jochen Grebing — Helmholtz-Zentrum Dresden-Rossendorf, Center for Advancing Electronics Dresden

The following work illustrates top-down fabrication and characterization of reconfigurable, undoped silicon nanowire field effect transistor with Schottky junctions. The nanowires are fabricated on SOI wafer by electron beam lithography and oxidized for passivation. Two Nickel-Silicide Schottky junctions are formed by Nickel deposition and annealing from source and drain region creating silicide-silicon-silicide contacts. Diffusion of Ni-Si is precisely controlled by radial crystal orientation of the nanowire and annealing temperature. The Schottky junctions are electrostatically controlled by surround gates. Transport properties of these nanowires can be modulated by changing local electrostatic gradient at the gates. One gate can modulate the current density while the other gate can be electrostatically programmed to shift the polarity of the device from N-type to P-type and vice-verse. Nanowire performance is optimized by reducing the edge roughness of the nanowires (lowering the scattering) and accurate alignment of the metal gates.