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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.23: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Optical Spectroscopy of Site-Controlled InAs Quantum Dots — •Julia Susan Wiegand¹, Ramin Dahbashi¹, Christian Mayer², Jens Hübner¹, Daniel Schaadt², and Michael Oestreich¹ — ¹Leibniz Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstraße 2, D-30167 Hannover, Germany — ²Technische Universität Clausthal, Institut für Energieforschung und Physikalische Technologien, Leibnizstraße 4, D-38678 Clausthal-Zellerfeld, Germany

Site-controlled quantum dots (SCQDs) are well suited candidates for a number of future applications in quantum-optronics. For device applications with novel functionalities - such as deterministic single photon sources - controlled positioning of QDs with high structural and electronic quality is desirable for scalable fabrication. We investigate SCQDs grown by molecular beam epitaxy on pre-patterned GaAs substrates [1] by optical high precision low-temperature micro-photoluminescence spectroscopy. The optical spatial resolution shows the successful controlled nucleation at the predefined sites. The photoluminescence spectra yield a measure of the SCQDs’ optical quality which is influenced by defects created in the prepatterning process.

[1] Helfrich et al., Growth and characterization of site-selective quantum dots, Phys. Stat. Sol. A 209, 2387 (2012).