Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.27: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Optical Properties of Rare-Earth doped InAs Quantum Dots — •Markus K. Greff, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

Opto-electronical devices like LEDs or lasers are included in nearly every technical product nowadays. One point that has led to their importance, is the broad tunability of optical properties of these devices. For example, by doping Gallium-Nitride (GaN) with rare-earth materials (RE) it is now possible to build full-colour LEDs and lasers. Here, we concentrate on systems with a lower bandgap: Combining RE with spintronics, exploiting both charge and spin of carriers, will allow to tune the optical and electrical properties of these devices further. In this work we show the successful doping of Indium-Arsenide (InAs) Quantum Dots (QDs) in a Gallium-Arsenide (GaAs) matrix with the rare-earth element Europium (Eu). We assume that the doping significantly shifts the photoluminescence (PL) spectrum of the QDs towards higher energies (blue shift) due to a diffusion-driven process in which a new sub-ensemble of Eu-doped QDs is formed during an additional annealing step. This is a first step towards further optical and electrical experiments and future spintronic applications of these QDs.