Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.2: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Synthesis and characterization of quantum sized InP nanowires prepared by UTAM surface nano patterning and reactive-ion etching technique — •Lin Cheng, Kin Mun Wong, and Yong Lei — Ilmenau University of Technology, Institute of Physics & IMN MacroNano (ZIK) Prof. Schmidt-Str. 26, 98693 Ilmenau (Germany)

The electronic properties of ultra-small indium phosphide (InP) nanowires had been rarely investigated. When the size of the nanowires is smaller than its Bohr radius, due to the quantum confinement effects, there are many interesting properties in the nanowires. In this study, single crystalline InP nanowires with diameter smaller than its Bohr radius are synthesized by first preparing ultra-thin alumina mask (UTAM) in 0.3M Oxalic acid for 1 min. Then the UTAM was transferred onto a single crystalline InP substrate and the pore size of the UTAM was reduced by atomic layer deposition. Gold or titanium was deposited by physical vapor deposition at the bottom of the pore openings in the UTAM to be used as the mask on the top surface of the InP substrate. Finally, the UTAM was removed and reactive-ion etching was used to prepare the arrays of quantum sized InP single crystalline nanowires in a vacuum chamber. We predict that our quantum sized InP nanowires will have very interesting electronic and transport properties that will be verified with the first-principles simulations on the nanowires.