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HL: Fachverband Halbleiterphysik

HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport

HL 30.4: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Analysis of the nucleation behavior of quantum dots on planar and prepatterned GaAs substrates for the integration in single-photon devices — •Marc Sartison, Matthias Paul, Ulrich Rengstl, Elisabeth Koroknay, Susanne Weidenfeld, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

In the last decade, the potential of semiconductor quantum dots for the application in single-photon devices has been widely demonstrated. Most approaches deal with the self-assembly of the quantum dots, but for the functionalization into complex arrangements a precise positioning is essential. In this contribution, we show our routes for the fabrication of single addressable quantum dots (QDs). The growth of the QDs takes place in a metal-organic vapor-phase-epitaxy (MOVPE) system. We have concentrated on two approaches for prepatterning the GaAs substrates for different QD material systems. The first one is to produce a hexagonal hole pattern by microsphere photolithography and wet chemical etching, followed by an overgrowth with GaAs, InGaAs and InAs. The higher expected accumulation of In inside the holes, after InGaAs overgrowth, leads to strain effects changing the nucleation probability above. The second approach of site controlled nucleation of InP is done by wet chemical etched ridges and aperture oxidation. The resulting strain field is expected to support the nucleation probability of InP QDs above the aperture. Structural and optical characterization will show our first efforts.