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HL: Fachverband Halbleiterphysik
HL 30: Poster: Quantum dots and wires: Preparation, characterization, optical properties and transport
HL 30.5: Poster
Montag, 31. März 2014, 17:00–20:00, P2
InAs Quantum Dots at Telecom Wavelengths — •Fabian Olbrich1, Jan Kettler1, Matthias Paul1, Katharina Zeuner1, Sven Markus Ulrich1, Michael Jetter1, Matusala Yacob2, Mohamed Benjoucef2, Johann Peter Reithmaier2, and Peter Michler1 — 1University of Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Allmandring 3, 70569 Stuttgart, Germany — 2University of Kassel, Institute of Nanostructure Technologies and Analytics (INA), Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Semiconductor quantum dots have proven to be bright, well-defined and controllable single photon sources with the possibility of creating entangled photon pairs by utilizing the biexciton-exciton-cascade.
Hence they are good candidates to serve as emitters of non-classical light in fiber-based quantum networks with possible applications for quantum cryptography and quantum computers.
Under these circumstances it is desirable for QDs to emit at 1.31 µm (telecom O-band) or 1.55 µm (telecom C-band), which show low absorption. In order to manipulate the emission range of our QDs, mainly three approaches have been made to tune the original GaAs/InAs QDs (920 nm) towards these telecom wavelengths: The deposit of a strain reducing layer, the incorporation of Ga or the usage of an InP substrate.
We are able to show that these QDs are excellent single photon sources and find strong indications for the biexciton-exciton-cascade.