Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster: Nitrides
HL 31.4: Poster
Monday, March 31, 2014, 17:00–20:00, P2
Oxidative chemical vapor deposition of p-conductive polymers on ZnO and GaN — •Max Rückmann1, Stephanie Bley1, Florian Meierhofer2, Jens Reinhold2, Lutz Mädler2, Jürgen Gutowski1, and Tobias Voss1 — 1Institute of Solid State Physics, Semiconductor Optics, University of Bremen, 28359 Bremen, Germany — 2Foundation Institute of Materials Science (IWT), Department of Production Engineering, University of Bremen, Germany
Semiconducting ZnO and GaN nanowires can be used as optoelectronic components if a pn-junction can be realized. One possibility to create such a junction is the deposition of organic p-conductive polymers (here: polypyrrole (PP) and poly(3,4)-ethylenedioxythiophene (PEDOT)) on to the surface. For the deposition of polymer layers, we use oxidative chemical vapor deposition (oCVD), with a monomer and an oxidizing agent (here: FeCl3) in the gaseous phase, respectively. A constant flow of the monomer, supported by nitrogen carrier gas, passes the reaction chamber while the oxidizing agent evaporates and initiates the polymerization and thus p-doping directly on the sample surface. We demonstrate that a homogenous, thickness controlled coating of different ZnO and GaN samples can be achieved by carefully adjusting the process parameters like reaction time, substrate temperature, and the oxidizing agent’s amount and evaporation temperature. We discuss the results of structural, optical and electrical characterization of the hybrid structures for different deposition parameters.