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17:00 |
HL 31.1 |
The contribution has been withdrawn.
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17:00 |
HL 31.2 |
The role of Si during the growth of GaN micro- and nanorods — •Christian Tessarek, Martin Heilmann, Christel Dieker, Erdmann spiecker, and Silke Christiansen
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17:00 |
HL 31.3 |
Terahertz spectroscopy of electron transport in GaN — •Thomas Rene Arend, Stefan Gerhard Engelbrecht, Menno Johannes Kappers, and Roland Kersting
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17:00 |
HL 31.4 |
Oxidative chemical vapor deposition of p-conductive polymers on ZnO and GaN — •Max Rückmann, Stephanie Bley, Florian Meierhofer, Jens Reinhold, Lutz Mädler, Jürgen Gutowski, and Tobias Voss
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17:00 |
HL 31.5 |
Optical investigations of exciton-phonon coupling in GaInN quantum wells — •Manuela Klisch, Fedor Alexej Ketzer, Torsten Langer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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17:00 |
HL 31.6 |
GaInN/GaN multiple quantum well structures grown via plasma-assisted MBE — •Patricia Herbst, Christopher Hein, Andreas Kraus, Fedor Alexej Ketzer, Ronald Buss, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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17:00 |
HL 31.7 |
RF-MBE growth of AlN on sapphire utilizing AlN nucleation layers — •Christopher Hein, Andreas Kraus, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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17:00 |
HL 31.8 |
Photoreflectance studies on InGaN/GaN multi-quantum well structures — •Stefan Freytag, Christoph Berger, Pavel Y. Bokov, Armin Dadgar, Rüdiger Goldhahn, Alois Krost, and Martin Feneberg
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17:00 |
HL 31.9 |
Structural and luminescence properties of an AlInN/AlGaN based microcavity structure — •Max Trippel, Gordon Schmidt, Peter Veit, Frank Bertram, Christoph Berger, Armin Dadgar, Alois Krost, and Jürgen Christen
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17:00 |
HL 31.10 |
MOVPE growth of group III-Nitrides on ruthenium coated silicon and sapphire substrates — •Silvio Neugebauer, Armin Dadgar, Jürgen Bläsing, Peter Veit, and Alois Krost
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17:00 |
HL 31.11 |
Morphology and atomic structure of GaN surfaces and InGaN/GaN quantum wells — •Sabine Alamé, Andrea Navarro-Quezada, Daria Skuridina, Tim Wernicke, Michael Kneissl, Patrick Vogt, and Norbert Esser
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17:00 |
HL 31.12 |
Analysis of semipolar gallium nitride layers by µ-Raman spectroscopy — •Lisa Hiller, Philipp Schustek, Matthias Hocker, Sebastian Bauer, Marian Caliebe, Tobias Meisch, Ferdinand Scholz, and Klaus Thonke
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17:00 |
HL 31.13 |
Development of a dedicated low noise EBIC measurement system — •Manuel Knab, Matthias Hocker, Ingo Tischer, Junjun Wang, Ferdinand Scholz, and Klaus Thonke
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