Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.10: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Effect of external magnetic field on the photoresistance of ZnO based wires — •Israel Lorite¹, Carlos Ivan Zalandazini², Silvia Perez², and Pablo Esquinazi¹ — ¹Division of Superconductivity and Magnetism, Institute for experimental Physics II, Fakultät für Physik und Geowissenschaften, Linnéstrasse 5, 04103 Leipzig, Germany — ²Laboratorio de Física del Sólido, Dpto. de Física, FCEyT, Universidad Nacional de Tucumán, 4000 Tucumán, Argentina

An exhaustive study of the effect of the external magnetic field on the transient photoresitance of Hydrogen implanted Li doped ZnO was carried out. The wire was illuminated with light at different wavelength; 549 nm, 500 nm and 370 nm, respectively. A variation of the relaxation time is observed when external magnetic field is applied. This variation changes as a function of the used light to illuminate the wire and the intensity of the magnetic field. This variation is interpreted by means of the electronic state variation of the point defects of ZnO, such as oxygen vacancies, Vo, after illumination. The Vo can be single ionized, Vo+. Since the Vo+ presents net magnetic moment, the external magnetic field could change its spin state. This change would increase the probability of the photo generated electron-hole recombination to reduce the transient photo resistance time.