Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.11: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals — •Florian Schmidt¹, Thorsten Schultz¹, Stefan Müller¹, Holger von Wenckstern¹, Christof Peter Dietrich¹, Robert Heinhold², Hyung-Suk Kim², Martin Ward Allen², and Marius Grundmann¹ — ¹Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — ²The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8043, New Zealand

In this study we report on the electrical properties and deep-level defects of a ZnO microwire grown by carbo-thermal evaporation, a pulsed laser deposited ZnO thin film and a hydrothermally grown ZnO bulk crystal. Deep defects were investigated by means of deep-level transient spectroscopy. The origin of a defect labelled T2 is assumed to be a donor-acceptor complex, with its concentration being limited by the acceptor involved [1]. Our investigations suggest the zinc vacancy V_Zn as a possible candidate for the acceptor. From first-principles studies it is known that V_Zn has a smaller formation energy for a higher Fermi level which is proportional to the net-doping density in our samples. That would suggest that the formation of such an acceptor is most likely in the PLD thin film, followed by the bulk sample and the microwire which is supported by the experiment [2].

[1] M. Schmidt et al., phys. stat. sol. 249, 588 (2012).

[2] F. Schmidt et al., Appl. Phys. Lett. 103, 062102 (2013).