Dresden 2014 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.6: Poster

Monday, March 31, 2014, 17:00–20:00, P2

Low-temperature ZnO buffer for high-quality ZnO epitaxy on Si(111) substrate grown by molecular beam epitaxy — •Manuel H. W. Bader and Cedrik Meier — University of Paderborn, Experimental Physics & CeOPP, Warburger Str. 100, 33098 Paderborn.

Due to its unique properties such as the large direct bandgap of 3.37eV and its high exciton binding energy of 60meV, zinc oxide (ZnO) is a very promising semiconductor for optoelectronic and photonic applications even at room temperature. Especially quantum wells and multi-quantum wells can function as light emitting sources inside photonic devices. Therefore, thin ZnO films have been grown in a plasma-assisted molecular beam epitaxy system using Silicon (111) substrates. Growth conditions were systematically studied using ex-situ atomic force microscopy (AFM), x-ray diffraction (XRD) and photoluminescence (PL). Due to the large mismatch between the in-plane lattice constants of ZnO(0001) and Si(111), usually granular films are obtained. A solution capable of overcoming the effects of the undesired mismatch is achieved by inducing a low-temperature ZnO buffer layer between the substrate and the ZnO film. The effects of the additional buffer layer are studied and optimized in order to obtain a high-temperature ZnO film on top of the buffer layer with high-quality.