Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 32: Poster: ZnO and its relatives

HL 32.9: Poster

Montag, 31. März 2014, 17:00–20:00, P2

Linear and nonlinear optical deformation potentials in bent ZnO microwires — •Sherzod Khujanov, Christof P. Dietrich, Jörg Lenzner, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnestr. 5, 04103 Leipzig, Germany

The wide-band gap semiconductor ZnO has outstanding optical and piezoelectrical properties that can be modified under tensile and compressive strain [1]. The piezoelectric coefficient of ZnO is at least twice as high as for other II-IV compounds with wurtzite crystal structure. Hexagonal zink oxide microwires were fabricated by using a vapor-phase transport process [2] at temperature of 1150 ^∘C . The grown wires have diameters in the range of 0.5 − 50 µ m and lengths between 0.1 and 20 mm. For low temperature cathodoluminescence measurements, the microwires were transferred onto silicon substrates, mechanically bent and fixed with silver paste. Linescans (in steps of 100 nm) from the tensile to the compressivly strained part of the wires revealed different strain regimes. We observe a linear energy shift for uniaxial strain up to ±1.5% and deduce a deformation potential which is in very good agreement to previous studies [1]. For higher strain values (up to ±3%), we are observed the onset of nonlinear effects.

[1] C. P. Dietrich, et al: Appl. Phys. Lett. 98, 031105 (2011).

[2] M. Lorenz et al: Phys. Stat. Sol.(b) 247, 1265 (2010).