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HL: Fachverband Halbleiterphysik
HL 40: Transport: Spintronics and magnetotransport (organized by TT)
HL 40.3: Talk
Tuesday, April 1, 2014, 10:00–10:15, BEY 81
Electrical tuning of spin-orbit interaction in InAs nanowires — •Zoltán Scherübl1, Gergö Fülöp1, Morten Hannibal Madsen2, Samuel d'Hollosy3, Christian Schönenberger3, Jesper Nygård2, and Szabolcs Csonka1 — 1Departement of Physics, Budapest University of Technology and Economic, Budapest, Hungary — 2Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark — 3Departement of Physics, University of Basel, Basel, Switzerland
InAs nanowires are a promising platform to fabricate various quantum electronic devices, for instance they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is needed in spin based qunatum devices, for example spintronic applications, spin qubits. In this study we investigated the possibility of tuning the SOI by electrostatic field. The sources of the electric field were two sidegates paralel to the wire axis. The strength of the SOI was analyzed by weak-antilocalization. We demonstrated that the SOI can be strongly tuned, by a factor of 3 with the electric field across the nanowire, while the average electron density in the nanowire was kept constant.