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HL: Fachverband Halbleiterphysik

HL 44: ZnO and its relatives: Devices

HL 44.5: Vortrag

Dienstag, 1. April 2014, 11:45–12:00, POT 151

Influence of antimony doping on optical and structural properties of ZnO nanowires — •Sarah Schlichting¹, Thomas Kure¹, Alexander Franke¹, Emanuele Poliani¹, Eswaran Senthil Kumar², Faezeh Mohammadbeigi², Simon Watkins², and Axel Hoffmann¹ — ¹Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany — ²Simon Fraser University, Department of Physics, Burnaby, Canada

Antimony (Sb) is a canditate to obtain p-conductivity in ZnO. First-principles calculations indicate that a complex with induced Zn vacancies and low formation energy would lead to a shallow acceptor.[1] However, there is also evidence that Sb acts as a shallow donor in ZnO so that the doping mechanism remains controversial.[2]
We investigated the optical and structural properties of Sb-doped ZnO nanowires (NW) by low temperature photoluminescence (PL) under the influence of an external magnetic field, Raman measurements on ensemble and single NW as well as TEM-CL.
We concluded that the Sb emission at 3.3639 eV with a FWHM of approx. 200 µ eV originates from a donor bound exciton. Our measurements confirm the observed donor behavior of Sb by the formation of a composed Sb and Zn vacancy complex.
[1] S. Limpijumnong et al., Phys. Rev. Lett. 92, 155504 (2004); [2] E. Senthil Kumar et al., Appl. Phys. Lett. 102, 132105 (2013)