Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: ZnO and its relatives: Devices

HL 44.8: Talk

Tuesday, April 1, 2014, 12:30–12:45, POT 151

Influence of pH and ions on the transistor performance and topography of solution processed ZnO nanoparticles — •Paul Mundt^1,3, Nicole Anderl^2,3, Stefan Vogel¹, and Heinz von Seggern¹ — ¹Electronic Materials Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany — ²Ernst-Berl-Institut für Technische und Makromolekulare Chemie, Technische Universität Darmstadt, Alarich-Weiss-Str. 4, D-64287 Darmstadt, Germany — ³Merck TU Darmstadt-Lab, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Alarich-Weiss-Str. 12, 64287 Darmstadt, Germany

Recently, zinc oxide nanoparticles (ZnO-NP) have become a subject of considerable interest due to their high potential for developing solution processed, low cost, low temperature semiconducting devices. The present work utilizes sol gel processed ZnO-NPs without an additional steric stabilization. Thin ZnO-NP films were produced by spin coating using post-treatment temperatures of 250°C only being therefore suitable for applications on flexible substrates. By using different doping agents, the electronic behaviour of the devices can be influenced in a wide range from semiconducting thin film transistors yielding electron mobilities of 10-2 cm*/Vs up to conducting devices with currents in the order of mA. We investigate these changes in device behaviour for different doping agents using photoelectron spectroscopy and UV/VIS spectroscopy and correlate the results with the change in morphology using scanning electron microscopy and atomic force microscopy.