Dresden 2014 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 45: Optical properties II

HL 45.4: Talk

Tuesday, April 1, 2014, 12:00–12:15, POT 006

Determination of Raman tensor components in α-GaN — •Christian Röder, Gert Irmer, Cameliu Himcinschi, and Jens Kortus — TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany

In order to specify charge carrier concentration and mobility in GaN by Raman spectroscopy the value of the Faust-Henry coefficient is required but it is still debated. According to the symmetry of wurtzite-type GaN three different Faust-Henry coefficients are implied which can be related to the peak ratios of LO- and TO-phonon of the corresponding polar Raman active modes and the Raman scattering efficiency of phonon-polaritons [1]. In this work the Raman tensor components of α-GaN single crystals were determined by Raman intensity measurements using various scattering geometries. The obtained values of the Faust-Henry coefficients are compared with Raman scattering efficiency results on phonon-polaritons in wurtzite-type GaN.
The authors would like to thank the European Union (EFRE) as well as the Free State of Saxony for financial support within the ADDE project.

[1] Irmer, G. et al.: Phys. Rev. B 88, 104303 (2013)