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HL: Fachverband Halbleiterphysik

HL 46: Nitrides: mostly structural characterization

HL 46.2: Vortrag

Dienstag, 1. April 2014, 12:00–12:15, POT 051

Emission properties of coupled asymmetric cubic AlGaN/GaN quantum wells — •Florian Hörich¹, Marcus Prier¹, Jürgen Bläsing¹, Tobias Wecker², Donat J. As², Martin Feneberg¹, and Rüdiger Goldhahn¹ — ¹Otto-von-Guericke University, Magdeburg, Germany — ²University of Paderborn, Germany

Cubic AlGaN/GaN double QWs with different quantum well thicknesses and barrier compositions were grown by plasma-assisted MBE. HRXRD and ellipsometry were performed to determine the composition and barrier heights. The coupling between the QWs was studied by temperature depended photoluminescence spectroscopy. Measured transition energies were compared to theoretical values obtained by transfermatrix method taking the varying exciton binding energy for single QWs into account. Current results suggest a conduction band offset of 64% of the band-gap differences between GaN and AlGaN.