HL 46: Nitrides: mostly structural characterization
Dienstag, 1. April 2014, 11:45–12:45, POT 051
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11:45 |
HL 46.1 |
Aberration-corrected STEM investigation of epitaxial GaN thin films — •David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, and Bernd Rauschenbach
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12:00 |
HL 46.2 |
Emission properties of coupled asymmetric cubic AlGaN/GaN quantum wells — •Florian Hörich, Marcus Prier, Jürgen Bläsing, Tobias Wecker, Donat J. As, Martin Feneberg, and Rüdiger Goldhahn
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12:15 |
HL 46.3 |
Influence of substrate material on InN island nucleation during double-pulsed PAMBE — •Andreas Kraus, Christopher Hein, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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12:30 |
HL 46.4 |
Structural and optical properties of MBE grown asymmetric cubic AlGaN/GaN double quantum well structures — •Tobias Wecker, Florian Hörich, Martin Feneberg, Rüdiger Goldhahn, Dirk Reuter, and Donat J. As
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