Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 47: Spintronics (organized by MA)
HL 47.2: Talk
Tuesday, April 1, 2014, 14:00–14:15, HSZ 401
Antiferromagnetic spintronics — •I. Fina1, 2, X. Marti3,4,5, D. Yi3, C. Rayan-Serrao3, J. Liu3, J.-H. Chu3, S.J. Suresha3, J. Zelezny5, T. Jungwirth5,6, J. Fontcuberta3, and R. Ramesh3 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, Halle Germany — 2Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, Spain — 3Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA — 4Dept. Condensed Matter Physics Charles University in Prague — 5Institute of Physics ASCR, v.v.i., Cukrovarnick 10, 162 53 Praha 6, Czech Republic — 6School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
Magnetic semiconductors entwine two of the most successful concepts in both fundamental physics and industrial applications. Recently antiferromagnets have been proposed as new and atractive material systems. Antiferromagnetic spintronics have been demonstrated by the fabrication of tunnel devices, atomic-size proof-of concepts, even devices without auxiliary ferromagnetic layers. Here we present the control of the electrical conductivity of an antiferromagnetic semiconductor by manipulating the magnetic state of a contiguous ferromagnetic.
We present an oxide-based fully epitaxial heterostructure, its structural characterization and the electrical measurements showing a direct link between state of the ferromagnetic gate and ohmic resistance of the semiconductor, even displaying distinct remnant resistance states. We will also show that distinct remnant states can also been obtained at room temperature, promising potential applicability.