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HL: Fachverband Halbleiterphysik

HL 48: Transport

HL 48.8: Vortrag

Dienstag, 1. April 2014, 15:45–16:00, POT 006

Study of the doping of crystalline silicon nanoparticle films with TCNQ molecules — •Willi Aigner¹, Stanislav Abramov¹, Hartmut Wiggers², Rui N. Pereira^1,3, and Martin Stutzmann¹ — ¹Walter Schottky Institut, Technische Universität München, Germany — ²Institute for Combustion and Gasdynamics - Reactive Fluids, Universität Duisburg-Essen, Germany — ³Institute for Nanostructures, Nanomodelling and Nanofabrication, Department of Physics, University of Aveiro, Portugal

Electronic devices incorporating solution-processable, semiconducting nanocrystals have been the subject of many studies in the last years. Recently, a significant enhancement of the electron conduction in silicon nanocrystal (Si-NC) thin films has been found by simply doping the films with a small amount of tetrafluorotetracyanoquinodimethane (F4-TCNQ) [1]. The F4-TCNQ molecules provide empty electronic states within the free space between the Si-NCs, which are close to the lowest unoccupied states of the NCs and, in this way a more efficient charge transport in the Si-NC network is achieved. In this work, we carried out a comprehensive study of doping Si-NC thin films with tetracyanoquinodimethane and compare the results with those obtained with F4-TCNQ. For a deeper understanding of the physics governing the molecule-induced electrical activation, films made of p- and n-type Si-NCs were also studied. According to theory [1], the electronic states introduced by the small molecules are solely accessible to electrons, implying that they are not expected to lead to an enhancement of hole conduction. [1] R. N. Pereira, J. Coutinho, et al. submitted, (2013)