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HL: Fachverband Halbleiterphysik

HL 52: Quantum wires: Optical properties (with TT)

HL 52.1: Vortrag

Dienstag, 1. April 2014, 14:30–14:45, POT 112

Continuous Wave Lasing in Sn:CdS Nanowires — •Marcel Wille^1,2, Robert Röder², Sebastian Geburt², Carsten Ronning², Mengyao Zhang³, and Jia Grace Lu³ — ¹Institut für Experimentelle Physik II/Halbleiterphysik, Universität Leipzig — ²Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena — ³Department of Physics and Electrical Engineering, University of Southern California

Semiconductor nanowires (NWs) are promising candidates for future optoelectronic applications due to their possibility of light generation, optical waveguiding and light amplification. The controlled modification of their electrical and optical properties by doping will continue the consequent progress in NW research. In a modified VLS growth process using tin (Sn) as catalyst the in-situ doping of cadmium sulphide (CdS) NWs was demonstrated. Optical investigations using temperature dependent photoluminescence and cathodoluminescence technique were correlated with electrical transport measurements in field-effect-transistor geometry [1]. Furthermore, these NWs exhibit ideal Fabry-Pérot resonator morphology necessary for the occurrence of laser oscillations under continuous wave excitation. The continuous wave lasing mode is proven by the evolution of the emitted power and spectrum with increasing pump intensity [2]. The high temperature stability up to 120 K at given pumping power is determined by the decreasing optical gain necessary for lasing in an electron hole plasma. [1] Zhang, M., Wille, M. et al., Submitted to Nano Letters, 09.2013 [2] Röder, R., Wille, M. et al., Nano Letters 2013, 13, 3602-3606